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CAS No. 1303-11-3 | INDIUM ARSENIDE

Name: INDIUM ARSENIDE CAS No. 1303-11-3 MF:AsIn MW:189.74 Purity:97% Package: 10g,25g,50g,100g,250g Worldwide Delivery

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Photoelectric Materials

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Product introduction

Introduction and application of CAS No. 1303-11-3 | INDIUM ARSENIDE

Synonyms:Arsinetriylindium(III);

indiganylidynearsane;

INDIUMARSENIDE;

Indiumarsenide,99.9999%tracemetalsbasis;

Indiumarsenide,Hardlyattackedbymineralacids;

indiumarsenide(inas);

Specification:

ITEMS	SPECIFICATION
CAS	1303-11-3
MF	AsIn
MW	189.74
Melting point	936°C
Refractive index	3.51
Density	5.69 g/cm3
Crystal structure	Cubic, Sphalerite Structure - Space Group F(-4)3m
Color	Grey
Solubility	Insoluble in acid solution
Form	1.5 to 9.5mm polycrystalline silicon wafer

application:

Indium arsenide is a semiconductor material that is difficult to purify. Indium arsenide-indium aluminum arsenic laminated points were used to prepare indium arsenide nanorings and an indium arsenide thermophotovoltaic cell with a barrier layer structure.

Usage: Used as electronics, optical materials, catalysts

Production method:

Indium arsenide is synthesized in the same way as gallium arsenide, also using a double-tube electric furnace. First put a quartz disk containing indium into the quartz ampoule with one end closed, then add arsenic, and vacuum seal it at 5×10-6Torr (1Torr=133.322Pa). The indium part of this ampoule is heated to 955°C, and the arsenic part is heated to 560°C. At this time, the vapor pressure of arsenic is approximately 33kPa. In the vapor state, arsenic reacts with indium heated to 955°C to form InAs. After 5 to 6 hours, take the ampoule out of furnace A. An InAs single crystal is generated from the front end of the disk.

Package and transportation :

Package: 10g,25g,50g,100g,250g